LEE Jian-Hsing | Taiwan Semiconductor Manufacturing Company, R&D Device

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概要

• 同名の論文著者
• Taiwan Semiconductor Manufacturing Company, R&D Deviceの論文著者

関連著者

• Hwang Heuy-liang

  Department Of Electrical Engineering Tsing-hua University

• SHIH Jiaw-Ren

  Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department

• LEE Jian-Hsing

  Taiwan Semiconductor Manufacturing Company, R&D Device Department

• WU Yi-Hsun

  Taiwan Semiconductor Manufacturing Company, R&D Device Department

• LIEW Boon-Khim

  Taiwan Semiconductor Manufacturing Company, R&D Device Department

• HWANG Huey-Liang

  Department of Electrical Engineering, Tsing-Hua University

• CHEN Shui-Hung

  Taiwan Semiconductor Manufacturing Company, R&D Device

• DIAZ Carlos-H

  Taiwan Semiconductor Manufacturing Company, R&D Device

• Lee Joo-hyoung

  Memory R&d Division Hynix Semiconductor Co.

• Wu Yi-hsun

  Taiwan Semiconductor Manufacturing Company R&d Device Department

• Diaz Carlos-h

  Taiwan Semiconductor Manufacturing Company R&d Device

• Liew Boon-khim

  Taiwan Semiconductor Manufacturing Company R&d Device Department

• Liew B‐k

  Taiwan Semiconductor Manufacturuing Company

• Chen Shui-hung

  Taiwan Semiconductor Manufacturing Company R&d Device

• Lee J‐h

  Wonkwang Univ. Chonpuk Kor

• Hwang Huey-liang

  Department Of Electrical And Power Engineering National Tsing Hua University

• Shin Jiaw-Ren

  Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department

• WU Yi-Hsun

  Taiwan Semiconductor Manufacturing Company, R&D Device

• SHIH Jiaw-Ren

  Taiwan Semiconductor Manufacturing Company, R&D Device

• LEE Jian-Hsing

  Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park

• LEE Jian-Hsing

  Taiwan Semiconductor Manufacturing Company, R&D Device

• CHEN Shui-Hung

  Taiwan Semiconductor Manufacturing Company, R&D Device

• DIAZ Carlos-H

  Taiwan Semiconductor Manufacturing Company, R&D Device

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著作論文

• The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process

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