Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る

• In this study, a novel termination is designed in a low-voltage N-channel trench power metal–oxide–semiconductor field-effect transistor (MOSFET) to simplify the fabricating process. In a conventional trench power-MOSFET (PowerMOS), a field oxide with a metal field plate is often used for edge termination. The field oxide only exists in the termination region of the trench PowerMOS; therefore if the termination can be designed without the field oxide, field oxidation can be removed from the fabrication. Trench termination is proposed in this work to replace field oxide termination. The use of multiple trench rings leads to the desired breakdown voltage. The temperature effect in trench termination must be considered owing to the negative coefficient of the threshold voltage ($V_{\text{TH}}$) of the P-type MOS (PMOS) and the temperature. This work also provides a design guideline for trench termination in the low-voltage trench PowerMOS.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• Lin Chrong

  Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.

• Lin Ming-Jang

  ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.

• Lin Ming-Jang

  ANPEC Electronics Corporation, Hsinchu, Taiwan, R.O.C.

• Liaw Chorng-Wei

  Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Yeh Leaf

  ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.

関連論文

• Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress
• Multilevel Antifuse Cells with Programmable Contact in Pure 90 nm Logic Process
• Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor
• P-Channel Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance
• A Novel Sub-20 V Contact Gate Metal Oxide Semiconductor Field Effect Transistor with Fully Complementary Metal Oxide Semiconductor Compatible Process

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