Lin Ming-Jang | ANPEC Electronics Corporation, Hsinchu, Taiwan, R.O.C.
スポンサーリンク
概要
関連著者
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Lin Ming-Jang
ANPEC Electronics Corporation, Hsinchu, Taiwan, R.O.C.
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Lin Chrong
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Liaw Chorng-Wei
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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King Ya-ching
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lin Jyh-Ling
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
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Lin Ming-Jang
ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.
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Lin Ming-Jang
Anpec Electronics Corporation, No. 6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan
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Lin Chrong
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Hsu Charles
eMemory Technology Inc., Hsin-Chu 300, Taiwan, R.O.C.
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Hsu Charles
eMemory Technology Inc., Hsinchu, Taiwan, R.O.C.
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Yeh Leaf
ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.
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Chang Ching-Hung
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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King Ya-Ching
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Lin Li-Jheng
Department of Electronic Engineering, Huafan University, Shintin, Taipei 223, Taiwan
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Lin Li-Jheng
Department of Electronic Engineering, Huafan University, Shintin Taipei 223, Taiwan
著作論文
- Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress
- Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor
- P-Channel Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance