Liaw Chorng-Wei | Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
スポンサーリンク
概要
- Liaw Chorng-Weiの詳細を見る
- 同名の論文著者
- Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.の論文著者
関連著者
-
Lin Chrong
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
-
Lin Ming-Jang
ANPEC Electronics Corporation, Hsinchu, Taiwan, R.O.C.
-
Liaw Chorng-Wei
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
-
King Ya-ching
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
-
Lin Ming-Jang
ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.
-
Lin Chrong
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
-
Hsu Charles
eMemory Technology Inc., Hsin-Chu 300, Taiwan, R.O.C.
-
Hsu Charles
eMemory Technology Inc., Hsinchu, Taiwan, R.O.C.
-
Yeh Leaf
ANPEC Electronics Corporation, No. 6, Dusing 1st. Rd., Hsinchu 300, Taiwan, R.O.C.
-
Chang Ching-Hung
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
-
King Ya-Ching
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
著作論文
- Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor
- P-Channel Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance