Electrical Properties and Microstructures of PbZrTiO_3 Thin Films Prepared by Laser Annealing Techniques

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概要

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• PbZrTiO_3 (PZTJ films with l0mol% excess lead were prepared by a metal-organic decomposition (MOD) method on a Pt-precoated Si substrate. The deposited films were first pyrolyzed at 400℃ for 30 min and then an exeimer laser with KrF radiation and a continuous-wave CO_2 laser were employed for annealing. The experimental results indicated that the remanent polarization of PZT films for CO_2-laser-annealed specimens is seven times higher than that of KrF-laser-annealed ones. Transmission electron microscopic investigations suggest that the upper layer of KrF-laser-annealed PZT films crystallized and films at the bottom layer remained amorphous. The combined series of crystallized and amorphous layers degrades the ferroelectric properties of PZT thin films. In contrast, Transmission electron mieroseopy investigations reveal more homogenous microstructures and better crystallinity for PZT films annealed using the CO_2 laser. CO_2 laser annealing improves ferroelectric properties of PZT films and good-quality PZT thin films could be obtained at low temperatures.

• 社団法人応用物理学会の論文
• 2002-11-30

著者

• Chou Chen-chia

  Department Of Mechanical Engineering National Taiwan University

• Pan Han-chang

  Department Of Mechanical Engineering National Taiwan University Of Science And Technology

• Chou Chia-fong

  Department Of Mechanical Engineering National Taiwan University Of Science And Technology

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