Investigation of Thermal Coefficient for Polycrystalline Silicon Thermal Sensor Diode

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概要

• 論文の詳細を見る

• Thermal sensors utilizing p-n junction diodes built into the polycrystalline silicon layer are developed. The effective factors influencing the thermal coefficient of polycrystalline silicon thermal sensor diodes are clarified. It is found that diodes with a light boron dose have a larger thermal coefficient than those with a heavy boron dose. The plural p-n diodes connected with more cascade series number have a larger thermal coefficient than ones with less cascade series number. The periphery of the thermal sensor seems to have little effect on the thermal coefficient. In addition, the thermal coefficient will become higher as a larger forward current is selected. The thermal coefficient of the sensor with a boron dose of 1×10^<15>cm^<-2> will reach a saturation value of -2mV/K when the forward current is above 2μA.

• 社団法人応用物理学会の論文
• 1992-02-15

著者

• Yeh Ching-fa

  Institute Of Electronics National Chiao Tang University

• LIN Shyue-Shyh

  Institute of Electronics, National Chiao Tung University

• YEH Ching-Fa

  Institute of Electronics, National Chiao Tung University

• YANG Geun-Pin

  Institute of Electronics, National Chiao Tung University

関連論文

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• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode
• The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Investigation of Thermal Coefficient for Polycrystalline Silicon Thermal Sensor Diode

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