The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode

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概要

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• A 16-bit/mm, high-resolution, Schottky a-Si:H photodiode linear sensor array was fabricated, and the effect of temperature on its I-V characteristics was studied. Annealing the a-Si:H photodiodes at 200℃ in air for 30 minutes lowered the dark current and improved the I_p/I_d. Under reverse bias, the dark current increased with temperature and doubled for every 8.89℃ rise, while the photocurrent showed few effects below 100℃.

• 社団法人応用物理学会の論文
• 1992-09-01

著者

• YEH Ching-Fa

  Institute of Electronics, National Chiao-Tung University

• Chang Kuan-lun

  Institute Of Electronics National Chiao-tung University

• Yeh Ching-fa

  Institute Of Electronics National Chiao-tung University

• Yeh Ching-fa

  Institute Of Electronics National Chiao Tang University

関連論文

• Experimental Comparison of Off-State Current between High-Temperature- and Low-Temperature-Processed Undoped Channel Polysilicon Thin-Film Trarnsistors
• The Characterization of Al_2O_3 Prepared by Anodic Oxidation
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode
• The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Investigation of Thermal Coefficient for Polycrystalline Silicon Thermal Sensor Diode

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