LEE Da-Yuan | Institute of Electronics, National Chiao Tung University
スポンサーリンク
概要
関連著者
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HUANG Tiao-Yuan
National Nano Device Laboratory
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LEE Da-Yuan
Institute of Electronics, National Chiao Tung University
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Lee Da-yuan
Institure Of Electronics National Chiao Tung University
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Lin Horng-chih
National Chiao Tung University
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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HUANG Tiao-Yuan
Institute of Electronics, National Chiao Tung University
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LIN Horng-Chih
National Nano Device Labs.
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Huang T-y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
National Nano Device Laboratories
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Lin Horng-chih
National Nano Device Lab.
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Lee D‐y
Institute Of Electronics National Chiao Tung University
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Lin Horng-Chin
National Nano Device Laboratories
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Wang T
National Chiao Tung Univ. Hsin‐chu Twn
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Tsai Min-yu
Institute Of Electronics National Chiao Tung University
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LU Wen-Tai
Institute of Electronics, National Chiao-Tung University
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Wang Meng-feng
Institute Of Electronics National Chiao Tung University
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Lu Wen-tai
Institute Of Electronics National Chiao Tung University
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CHIANG Wan-Ju
Institute of Electronics, National Chiao Tung University
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WANG Tahui
Institute of Electronics, National Chiao Tung University
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Chiang Wan-ju
Institute Of Electronics National Chiao Tung University
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Lu Wen-Tai
National Nano Device Laboratories
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LIN Homg-Chih
National Nano Device Laboratories
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Huang Tiao-yuan
National Nano Device Laboratories:institure Of Electronics National Chiao Tung University
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WANG T.
Institute of Electronics, National Chiao Tung University
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Huang Tiao-yuan
National Chiao Tung University
著作論文
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
- Breakdown Modes and Their Evolution in Ultrathin Gate Oxide