The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Lei Bo-hsiung

  Department Of Electrical Engineering National Sun Yat-sen University

• Lei B‐h

  National Sun Yat‐sen Univ. Kaohsiung Twn

• Lin Chein-hsin

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Lin C‐h

  Department Of Materials Science And Engineering Tsing-hut University

• LEE Ming-Kwei

  Department of Electrical Engineering, National Sun Yat-sen University

• LIN Chen-Hsi

  Winbond Electronics Corp.

• Lee M‐k

  National Sun Yat‐sen Univ. Kaohsiung Twn

• YANG Ching-Nan

  Department of Electrical Engineering, National Sun Yat-Sen University

• LIN Ching-Hsing

  Department of Electrical Engineering, National Sun Yat-Sen University

• Lin C‐h

  Department Of Physics National Cheng Kung University

• Lee Ming-kwei

  Department Of Elecrrical Engineering National Sun Yat-sen University

• Yang Ching-nan

  Department Of Electrical Engineering National Sun Yat-sen University

• Yang Ching-nan

  Department Of Elecrrical Engineering National Sun Yat-sen University

• Lin Ching-Hsing

  Department of Elecrrical Engineering, National Sun Yat-sen University

関連論文

• Coercivity of Melt-Spun Nd-Fe-B-Ti Alloys with Large Volume Fraction of Free-Iron Dispersoid
• High-Coercivity Nd-Fe-B-M Alloys with Low Level of Nd and B(M = Ti/V/Mo/Al)
• Polymer-Stabilized Reflective Fingerprint Cholesteric Texture Grating
• Scattering Light Interference from Liquid Crystal Polymer Dispersion Films
• Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition
• Properties of TiO_2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition : Short Note
• Novel Sidewall Capping for Degradation-Free Damascene Trenches of Low-Permittivity Methylsilsesquioxane
• Etching Characteristics and Mechanism of Ba_Sr_TiO_3 Thin Films in an Inductively Coupled Plasma
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• Dynamic Pattern Formation and Beam-Steering Characteristics of Cholesteric Gratings(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Cholesteric Gratings Doped with a Dichroic Dye
• High Coercivity Fe-Cr-Co Thin Films by Vacuum Evaporation
• Characterization of Titanium Oxide Films Prepared by LIquid Phase Deposition Using Hexafluorotitanic Acid
• The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask
• Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
• Etching Characteristics of (Ba, Sr)TiO_3 Thin Films in an Inductively Coupled Plasma
• Conformal Step Coverage and Trench Filling of Liquid Phase Oxide Deposition
• The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
• Improvement of Effective Charges in Oxynitride Prepared by Liquid Phase Deposition on Silicon
• Flow-Rate Modulation Epitaxial Growth of Zn_Mg_yS_xSe_ on GaAs
• Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
• Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
• Direct Bonding of Gallium Arsenide on Silicon
• High-Quality SiO2 Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition
• Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs
• Resistive Switching Properties of SrZrO_3-based Memory Films
• Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition
• Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• Blue Light Emitting Diode
• Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory (Special Issue : Solid State Devices and Materials (2))
• Optical Output Power Enhancement of Gallium Nitride Light-Emitting Diodes with Microlens Array on p-GaN Layer and Wave-Patterned Sidewalls by Gas-Assisted Focused Ion Beam Etching
• Improvement in Electrical Characteristics of Low-Pressure Chemical-Vapor-Deposited SiNx Dielectric Layer on GaN Substrate by Ammonium Sulfide Treatment
• Enhancement of Ultraviolet and Visible Emissions of ZnO with Zn by Thermal Treatment
• Gas-Assisted Focused Ion Beam Etching of Indium–Tin Oxide Film
• Leakage Current Improvement of Liquid-Phase-Deposited TixSi1-xOy Films on Amorphous Silicon with Ammonium Hydroxide Incorporation by Postmetallization Annealing
• Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
• Stabilizing Light Emission of Porous Silicon by In-situ Treatment
• Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
• Characteristics of Liquid-Phase-Deposited TiO2 Film on Hydrogenated Amorphous Silicon
• Gas-Assisted Etching of Sapphire Using Focused Ion Beam
• Very Low Leakage Current of High Band-Gap Al2O3 Stacked on TiO2/InP Metal--Oxide--Semiconductor Capacitor with Sulfur and Hydrogen Treatments
• Resistive Switching Properties of SrZrO3-Based Memory Films
• Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
• Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon
• Characteristics of liquid phase deposited SiO

もっと見る 閉じる

スポンサーリンク