Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs
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概要
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The electrical characteristics of fluorine-passivated polycrystalline TiO2 films on p-type (100) GaAs with (NH4)2Sx treatment were investigated. The fluorine from the fluorinated liquid-phase-deposited SiO2 can passivate the grain boundaries of polycrystalline TiO2 and suppress the leakage current through the grain boundaries. For fluorine-passivated metal–organic chemical vapor deposited TiO2 film on (NH4)2Sx treated-GaAs, the leakage current densities were $3.41 \times 10^{-7}$ and $1.13 \times 10^{-6}$ A/cm2 at 1.5 and $-1.5$ MV/cm, respectively. The interface state density and dielectric constant reached $4.6 \times 10^{11}$ cm-2 eV-1 and 71, respectively.
- 2007-12-25
著者
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Yen Chih-Feng
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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Lee Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424 Taiwan, R.O.C.
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