Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
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概要
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Tellurium-doped n-type GaAs0.6P0.4/GaAs with a carrier concentration of $10^{17}$ cm-3 was used as the substrate for the heteroepitaxial growth of ZnSxSe1-x by metalorganic vapor phase epitaxy. The mirror-like surface morphology of lattice-matched ZnS0.47Se0.53 on GaAs0.6P0.4/GaAs was obtained. The hillock density increased with $x$ deviating from 0.47. ZnS0.47Se0.53 lattice-matched to a GaAs0.6P0.4/GaAs substrate showed a strong peak with a full width at half maximum (FWHM) of 28 meV. The emission centered at 490 nm seemed to be favored at high Se/Zn ratios. This was considered to be associated with the Zn vacancy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
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SHIH Chung-Min
Department of Electrical Engineering, National Sun Yat-sen University
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Shih Chung-min
Department Of Electrical Engineering National Sun Yat-sen University
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Lee Ming-kwei
Department Of Electrical Engineering National Sun Yat-sen University
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Shih Tsung-Hsiang
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan 80424, Repu
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Huang Hsin-Fu
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan 80424, Repu
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Wei Shyh-Jen
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan 80424, Repu
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Wei Shyh-jen
Department Of Electrical Engineering National Sun Yat-sen University
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Huang Hsin-fu
Department Of Electrical Engineering National Sun Yat-sen University
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Shih Tsung-hsiang
Department Of Electrical Engineering National Sun Yat-sen University
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