Blue Light Emitting Diode
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概要
- 論文の詳細を見る
An n-ZnSe/p-ZnSe/p^+-GaAs blue light emitting diode was prepared by low pressure organometallic chemical vapor deposition. Its electroluminescence wavelength was 461 nm with a full width at half maximum 52 meV at 300 K. It shows that a pure blue ZnSe light emitting diode can be prepared under Zn-rich growth condition for n-type ZnSe epilayer doped with aluminum and under Se-rich growth condition for p-type ZnSe epilayer doped with nitrogen.
- 社団法人応用物理学会の論文
- 1995-07-15
著者
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LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
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LEE Ming-Kwei
Institute of Electrical Engineering, National Sun Yat-Sen University
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Lee M‐k
National Sun Yat‐sen Univ. Kaohsiung Twn
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Yeh M‐y
National Sun Yat‐sen Univ. Kaohsiung Twn
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YEH Min-Yen
Institute of Electrical Engineering, National Sun Yat-Sen University
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HUANG Hon-Da
Institute of Electrical Engineering, National Sun Yat-Sen University
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HONG Chih-Wei
Institute of Electrical Engineering, National Sun Yat-Sen University
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Huang H‐d
National Sun Yat‐sen Univ. Kaohsiung Twn
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Hong Chih-wei
Institute Of Electrical Engineering National Sun Yat-sen University
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