Flow-Rate Modulation Epitaxial Growth of Zn_<1-y>Mg_yS_xSe_<1-x> on GaAs

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概要

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• The quaternary Zn_<1-y>Mg_yS_xSe_<1-x> epilayers were grown on GaAs by low-pressure flow-rate modulation organometallic vapor phase epitaxy. We find that not only biscyclopentadienyl-magnesium(CP_2Mg)but also diethylzinc(DEZn)react with H_2S in the gas-phase of low-pressure organometallic vapor phase epitaxy from secondary ion mass spectroscopy(SIMS)observation. The magnesium content y and the sulfur content x in the quaternary Zn_<1-y>Mg_yS_xSe_<1-x> alloys cannot be controlled independently. The flow-rate modulation epitaxy can reduce the prereactions and improve the quality of the epitaxial growth of the quaternary Zn_<1-y>Mg_yS_xSe_<1-x> alloys.

• 社団法人応用物理学会の論文
• 2000-04-15

著者

• LEE Ming-Kwei

  Department of Electrical Engineering, National Sun Yat-sen University

• Lee Ming-kwei

  Department Of Elecrrical Engineering National Sun Yat-sen University

• PAN Shyi-Shuh

  Department of Electrical Engineering, National Sun Yat-Sen University

• TSAY Boy-Tzong

  Department of Electrical Engineering, National Sun Yat-Sen University

• Pan Shyi-shuh

  Department Of Electrical Engineering National Sun Yat-sen University

• Tsay Boy-tzong

  Department Of Electrical Engineering National Sun Yat-sen University

• Tsay Bor-Tzong

  Department of Electrical Engineering, National Sun Yat-Sen University

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