High-Quality SiO2 Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition

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The electrical characteristics including current–voltage, capacitance–voltage, hysteresis loops, and interface state density of liquid-phase-deposited silicon dioxide (LPD-SiO2) films on the p-type (100) gallium arsenide (GaAs) substrate with and without ammonium sulfide treatments were investigated. The aqueous solution of hydrofluosilicic acid and boric acid was used as the growth solution for silicon dioxide films. The GaAs substrate with ammonium sulfide treatment shows improved electrical characteristics. The electrical characteristics depend on the boric acid concentration in the growth solution. The leakage currents can reach $3.95 \times 10^{-8}$ and $1.01 \times 10^{-7}$ A/cm2 under positive and negative electric fields at 0.5 MV/cm, respectively. The interface state density is $9.34 \times 10^{10}$ cm-2 eV-1 at an energy of 0.69 eV from the valence band.
2008-05-25