Optical Output Power Enhancement of Gallium Nitride Light-Emitting Diodes with Microlens Array on p-GaN Layer and Wave-Patterned Sidewalls by Gas-Assisted Focused Ion Beam Etching
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概要
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By using iodine gas-assisted focused ion beam etching, a gallium nitride light-emitting diode with wave-patterned sidewalls and a microlens array on a p-GaN layer was successfully fabricated without an additional lithography process. The gallium nitride light-emitting diode after gas-assisted focused ion beam etching on the sidewalls and p-GaN layer shows 24% enhancement from the sidewalls and 53% from the top surface in optical output power with an operating voltage increase of 0.06 V at 20 mA.
- 2008-04-25
著者
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Kuo Kwei-Kuan
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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