Direct Bonding of Gallium Arsenide on Silicon
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概要
- 論文の詳細を見る
Direct bonding of gallium arsenide on silicon is studied. The technology is expected to enable the easy integration of gallium arsenide optoelectronic devices with silicon very-large-scale integrated circuits. The interface quality of n-GaAs/p-Si can be improved with a thermal annealing process. It is examined by the current-voltage characteristics of the n-GaAs/p-Si diode. The bonding strength was found to be sufficiently high and could "high enough to" withstand the subsequent grinding and polishing procedures of the bonded wafers.
- 社団法人応用物理学会の論文
- 1999-07-15
著者
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LEE Ming-Kwei
Department of Electrical Engineering, National Sun Yat-sen University
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Yeh Min-Yen
Department of Electrical Engineering, National Sun Yat-sen University
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Guo Shyh-Jen
Department of Electrical Engineering, National Sun Yat-sen University
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Huang Hung-Da
Department of Electrical Engineering, National Sun Yat-sen University
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Yeh Min-yen
Department Of Electrical Engineering National Sun Yat-sen University
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Guo Shyh-jen
Department Of Electrical Engineering National Sun Yat-sen University
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Huang Hung-da
Department Of Electrical Engineering National Sun Yat-sen University
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