Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films

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概要

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• The deposition of TiO_2 thin films on an InP substrate is studied by metalorganic chemical vapor deposition (MOCVD) in the temperature range of 300-550℃ with Ti(i-OC_3H_7)_4 and O_2 as the starting materials. The morphology of the TiO_2 films is mirror like. The structure, growthrate and grain size of the TiO_2 films depend on the deposition temperature. The film stoichometry was measured by energy dispersive X-ray (EDX) spectroscopy. The refractive index of the TiO_2 films as measured by ellipsometry reached 2.6 at the growth temperature of 350℃. .Based on current-voltage measurement of the Al/TiO_2/InP structure, the leakagecurrent is 1×10^<-5> A/cm^2 under the electric field of 0.06 MV/cm at the growth temperature of 500℃.

• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Huang J‐j

  Department Of Electrical Engineering National Sun Yat-sen University

• Huang Jung-jie

  Department Of Electrical Engineering National Sun Yat-sen University

• LEE Ming-Kwei

  Department of Electrical Engineering, National Sun Yat-sen University

• Lee M‐k

  National Sun Yat‐sen Univ. Kaohsiung Twn

• Lee Ming-kwei

  Department Of Elecrrical Engineering National Sun Yat-sen University

• Hung Yi-Min

  Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O

• Hung Yi-min

  Department Of Electrical Engineering National Sun Yat-sen University

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