Gas-Assisted Focused Ion Beam Etching of Indium–Tin Oxide Film
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概要
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Gas-assisted focused ion beam etching is a very useful extension of the focused ion beam technique. In this study, gas-assisted focused ion beam etching is performed on indium–tin oxide (ITO) films using the halide gases xenon difluoride and iodine. The results from this study show that higher etching rates of ITO films may be obtained using xenon difluoride gas at a short beam dwelling time and a negative beam overlap percentage. They also show that gas-assisted focused ion beam etching has several advantages over physical sputtering in focused ion beam milling: increase in etching rate, minimization of redeposition on sidewalls, and minimization of ion implantation in samples.
- 2008-01-25
著者
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Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
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Kuo Kwei-Kuan
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
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