Characteristics of Liquid-Phase-Deposited TiO2 Film on Hydrogenated Amorphous Silicon
スポンサーリンク
概要
- 論文の詳細を見る
In this study, titanium oxide films were grown on hydrogenated amorphous silicon by liquid phase deposition with ammonium hexafluoro-titanate and boric acid as sources. The structure of deposited film was amorphous, as examined by X-ray diffraction analysis. The leakage current density of an Al/TiO2/a-Si/p-type Si metal–oxide–semiconductor (MOS) structure can reach $7.35\times 10^{-5}$ A/cm2 under a reverse bias of 0.91 MV/cm. After O2 annealing at a temperature of 350 °C, the leakage current density can be much improved to $5.31\times 10^{-6}$ A/cm2 under the reverse bias of 0.91 MV/cm. The dielectric constant is 8.9 after O2 annealing at 450 °C.
- 2006-10-15
著者
-
Lee Ming-kwei
Department Of Elecrrical Engineering National Sun Yat-sen University
-
Lee Hung-Chang
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, R.O.C.
-
Lee Hung-Chang
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
-
Hsu Chih-Min
Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, R.O.C.
関連論文
- Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition
- Properties of TiO_2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition : Short Note
- Characterization of Titanium Oxide Films Prepared by LIquid Phase Deposition Using Hexafluorotitanic Acid
- The Protrusion of Liquid Phase Oxide Deposition on Patterned Silicon Wafer with Silicon Nitride as Mask
- Conformal Step Coverage and Trench Filling of Liquid Phase Oxide Deposition
- Unexpected mortality in pediatric patients with postoperative Hirschsprung's disease
- Experience with primary laparoscopy-assisted endorectal pull-through for Hirschsprung's disease
- The Improvement of Liquid Phase Deposition of Silicon Dioxide with Hydrochlorie Acid Incorporation
- Improvement of Effective Charges in Oxynitride Prepared by Liquid Phase Deposition on Silicon
- Flow-Rate Modulation Epitaxial Growth of Zn_Mg_yS_xSe_ on GaAs
- Heteroepitaxial Growth of ZnSxSe1-x on GaAs0.6P0.4/GaAs by Metalorganic Vapor Phase Epitaxy
- Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy
- Direct Bonding of Gallium Arsenide on Silicon
- High-Quality SiO2 Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition
- Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs
- Properties of TiO2 Thin Films on GaAs Prepared by Metalorganic Chemical Vapor Deposition
- Properties of TiO_2 Thin Films on InP substrate Prepared by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Optical Output Power Enhancement of Gallium Nitride Light-Emitting Diodes with Microlens Array on p-GaN Layer and Wave-Patterned Sidewalls by Gas-Assisted Focused Ion Beam Etching
- Improvement in Electrical Characteristics of Low-Pressure Chemical-Vapor-Deposited SiNx Dielectric Layer on GaN Substrate by Ammonium Sulfide Treatment
- Enhancement of Ultraviolet and Visible Emissions of ZnO with Zn by Thermal Treatment
- Gas-Assisted Focused Ion Beam Etching of Indium–Tin Oxide Film
- Leakage Current Improvement of Liquid-Phase-Deposited TixSi1-xOy Films on Amorphous Silicon with Ammonium Hydroxide Incorporation by Postmetallization Annealing
- Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
- Stabilizing Light Emission of Porous Silicon by In-situ Treatment
- Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition
- Characteristics of Liquid-Phase-Deposited TiO2 Film on Hydrogenated Amorphous Silicon
- Gas-Assisted Etching of Sapphire Using Focused Ion Beam
- Very Low Leakage Current of High Band-Gap Al2O3 Stacked on TiO2/InP Metal--Oxide--Semiconductor Capacitor with Sulfur and Hydrogen Treatments
- Utilization of GaAs Masking Layers for Formation of Patterned Porous Silicon
- Characteristics of liquid phase deposited SiO