Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film
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概要
- 論文の詳細を見る
Silicon-based polycrystalline solar cells are first fabricated by metal-induced lateral crystallization in which n-type polycrystalline-silicon (poly-Si) films, processed using nickel-induced amorphous silicon, are grown on p-silicon substrate at 550 °C by furnace annealing. The fabricated n-type poly-Si/p-substrate solar cell exhibits a conversion efficiency of 10.4% and an open-circuit voltage of 0.54 V without any passivation or antireflection coating layers.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-10-15
著者
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Kung Chung-yuan
Department Of Electrical Engineering National Chung Hsing University
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Hwang Jun-dar
Department Of Electrical Engineerine Da-yeh University
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Liu Jun-Chin
Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan, R.O.C.
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Chi Tzu-Yi
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua, Taiwan, R.O.C.
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Hsein In-Cha
Institute of Precision Engineering, National Chung Hsing University, Chung Hsing University, Taichung, Taiwan, R.O.C.
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Hwang Jun-Dar
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd., Da-Tsuen, Changhua, Taiwan, R.O.C.
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Kung Chung-Yuan
Department of Electrical Engineering, National Chung Hsing University, Taichung, Taiwan, R.O.C.
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- Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film