Optical and Magnetic Properties of Hydrothermally Synthesized Al-Doped ZnO Nanorods
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概要
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Hereby ZnO and Al-doped ZnO nanorods were fabricated on the silicon substrate by a low temperature hydrothermal process at 90 °C. The nanorods were prepared to study the Al doping effect on their structural, optical and magnetic properties. The Al-doped nanorods exhibited a c-axis (002) oriented wurtzite hexagonal structure as that of ZnO nanorods. Then, photoluminescence spectra showed an increase of visible emission peak intensity indicating the increase of defects in the nanorods. The peak intensity of E2 high mode as shown in Raman shift spectra decreased with the introduction of Al-dopant and also proved the increase of defects concentration and the suppression of crystallization in Al-doped ZnO nanorods. Finally, the hysteresis loops revealed the room temperature ferromagnetism of both compositions. As compared with ZnO nanorods, Al-doped ZnO nanorods showed a remarkable increase of saturation magnetization due to the increase of crystal defects.
- 2013-11-25
著者
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Kung Chung-yuan
Department Of Electrical Engineering National Chung Hsing University
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Young San-lin
Department Of Electrical Engineering Hsiuping Institute Of Technology
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Shi Jen-bin
Department Of Electronic Engineering Feng Chia University
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Kao Ming-cheng
Department Of Electrical Engineering National Sun Yat-sen University
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Chen Hone-zern
Department Of Electrical Engineering Hsiuping Institute Of Technology
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Shih Neng-fu
Department Of Electrical Engineering Hsiuping Institute Of Technology
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Kao Ming-Cheng
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
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Lin Teng-Tsai
Department of Electrical Engineering, National Chung-Hsing University, Taichung 40227, Taiwan
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You Jia-He
Department of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
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Shih Neng-Fu
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
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Young San-Lin
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
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Chen Hone-Zern
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
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Kung Chung-Yuan
Department of Electrical Engineering, National Chung-Hsing University, Taichung 40227, Taiwan
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