Low-Temperature-Induced Oxygen Precipitation Retardation Phenomenon in Czochralski Silicon : Effect of High-Temperature Preannealing and Other Related Phenomena

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-09-15

著者

• KUNG Chung-Yuan

  Institute of Precision Engineering, National Chung Hsing University

• Kung C‐y

  National Chung Hsing Univ. Taichung Twn

• Kung Chung-yuan

  Department Of Electrical Engineering National Chung Hsing University

• KUNG Chung-Yuan

  Industrial Technology Research Institute, Electronics Research & Service Organization

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• Low-Temperature-Induced Oxygen Precipitation Retardation Phenomenon in Czochralski Silicon : Effect of High-Temperature Preannealing and Other Related Phenomena
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