On the Annealing Effects of GaN Metal–Insulator–Semiconductor Capacitors with Photo-Chemical Vapor Deposition Oxide Layers
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概要
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GaN metal–insulator–semiconductor (MIS) capacitors with photo-assisted chemical vapor deposition (photo-CVD) SiO2 as the insulators were fabricated. The annealing effects of these capacitors were also investigated. It was found that we could significantly improve the electrical properties of the capacitors either by an in-situ annealing in O2 at 400 °C or by an ex-situ furnace annealing in N2 at 800 °C. It was also found that photo-CVD annealing is an effective tool to improve the GaN MIS capacitors at low temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Chiou Yu-zung
Department Of Electrical Engineering National Cheng Kung University
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Chiou Yu-Zung
Department of Electronics Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710
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