Noise Analysis of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors with Photochemical-Vapor Deposition SiO2 Layers

概要

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Low frequency noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) with a photo-CVD SiO2 gate oxide was investigated as a function of gate bias (from $V_{\text{gs}}=-8$ V to $V_{\text{gs}}=4$ V) in the linear region. In the linear region, the measured noise spectra were fitted well by the $1/f$ law up to 10 kHz. The normalized noise power density of the MOS-HFETs was proportional to ${V_{\text{gs}}}^{-1}$ when $-4\,\text{V}<V_{\text{gs}}<0\,\text{V}$ and were independent of the gate voltage when the devices were biased at $V_{\text{gs}}>0$ V. Moreover, the normalized noise-power densities of both devices were inversely proportional to the drain-source distance when $V_{\text{gs}}>0$ V. All the experiment data can be well explained by Hooge's Law. The Hooge's coefficients $\alpha_{\text{ch}}$ and $\alpha_{\text{s}}$ were estimated to be $10^{-3}$ approximately.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15