On Application of Analytical Model for Drain-Coupling Split-Gate Flash: Analytical Solution to Source-Side Injection Multilevel Programming

概要

論文の詳細を見る
In this paper, we present an analytical solution for evaluating the ramped-pulse programming behaviors of the drain-coupling source-side injection split-gate flash for multilevel charge storage. Starting with the programming model, the relations of the storage charge, read current and peak lateral field to the ramped-pulse programming time are analytically expressed as functions of electrical, technological and physical parameters and agree well with experimental results. The program speed and program accuracy, including the effects of electrical bias and process variations, are analytically estimated.
Japan Society of Applied Physicsの論文
2006-01-25