Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors
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概要
- 論文の詳細を見る
We demonstrate the fabrication process and the electrical characteristics of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) with different numbers of channel stripes. The device's electrical characteristics, such as on-current, threshold voltage, and subthreshold swing, were improved by increasing the number of channel stripes due to the enhancement of gate control. However, the electric field strength near the drain side was enlarged in multi-channel structures, causing severe impact ionization. The degradation of device's reliability under various electrical stress conditions was suggested.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Lei Tan-fu
Department Of Electronic Engineering National Chiao Tung University
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Chen Chih-Yang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan, R.O.C.
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Shieh Ming-Shan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan, R.O.C.
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Sang Jen-Yi
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan, R.O.C.
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Wang Shen-De
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan, R.O.C.
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Lei Tan-Fu
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan, R.O.C.
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