Efficient Improvement of Hot-Carrier-Induced Device's Degradation for Sub-0.1μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Lei Tan-fu

  Department Of Electronic Engineering National Chiao Tung University

• Yeh Wen-kuan

  Electrical Engineering Department National University Of Kaohsiung

• LIN Jung-Chun

  Department of Electronics Engineering, National Chiao Tung University

関連論文

• Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
• Efficient Improvement of Hot-Carrier-Induced Device's Degradation for Sub-0.1μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
• Extra Bonus on Transistor Optimization with Stress Enhanced Notched-Gate Technology for Sub-90 nm Complementary Metal Oxide Semiconductor Field Effect Transistor
• Investigation and Modeling of Stress Interactions on 90 nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches
• 2-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory
• Novel Vertical Polysilicon Thin-Film Transistor with Excimer-Laser Annealing
• Efficient Improvement of Hot-Carrier-Induced Device’s Degradation for Sub-0.1 μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
• Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors
• Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

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