HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Wang Ching-chiun
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Lee Heng-yuan
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Tsai Ming-jinn
Electronics And Optoelectronics Research Laboratories (eol)
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MAIKAP Siddheswar
Department of Electronic Engineering, Chang Gung University
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TZENG Pei-Jer
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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WANG Ting-Yu
Department of Material Science Engineering, National Taiwan University
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LIN Cha-Hsin
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LEE Lurng-Shehng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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YANG Jer-Ren
Department of Material Science Engineering, National Taiwan University
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