Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
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概要
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The formation-polarity-dependent improved resistive switching memory performance using a new IrOx/GdOx/WOx/W structure has been investigated. The memory device has been observed by both high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. The thicknesses of the GdOx and WOx layers are observed to be approximately 15 and 5.5 nm, respectively. All layers are also analyzed by X-ray photoelectron spectroscopy. The resistive switching mechanism is filament formation/rupture in the high-\kappa GdOx layer, which is controlled by the oxygen ion migration in bilayer GdOx/WOx films under negative and positive formation polarities. Excellent uniformity of SET/RESET voltages, low/high resistance states, and switching cycles have been observed under positive formation polarity owing to the charge trapping/detrapping in the high-\kappa GdOx switching layer. The memory device shows a long endurance of {>}10^{4} times, and extrapolated 10-year data retention at 85 °C. This device shows great potential for future nonvolatile memory (NVM) applications.
- 2012-04-25
著者
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Tsai Ming-jinn
Electronics And Optoelectronics Research Laboratories (eol)
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Maikap Siddheswar
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Lee Heng
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
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Chen Frederick
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
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Lee Heng
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Kao Ming-Jer
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Chen Frederick
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Jana Debanjan
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Tien Ta
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Chen Wei-Su
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Tsai Ming-Jinn
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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