High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
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概要
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A bipolar resistive switching memory device using high-\kappa Al2O3/WOx bilayer dielectrics in an IrOx/Al2O3/WOx/W structure with a small device area of 8 \times 8 μm2 is investigated for the first time. A high hole trapping density of {\sim}1.76 \times 10^{18} cm-3 in a high-\kappa Al2O3 film with a thickness of 5 nm is investigated using IrOx/Al2O3/SiO2/p-Si capacitors. The thickness and chemical bonding of the high-\kappa Al2O3/WOx films in a resistive memory device are investigated by both high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching memory device with a low power operation of 0.7 mW and a low current compliance of 500 μA has a reasonable SET/RESET voltage of -1.4 V/+1.0 V, a high resistance ratio of {>}10^{3}, an excellent read endurance of {>}10^{5} times at a large read voltage of -0.5 V, and 10 years of data retention at 85 °C.
- 2011-10-25
著者
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Rahaman Sheikh
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Banerjee Writam
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Prakash Amit
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Maikap Siddheswar
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Prakash Amit
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
関連論文
- Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point (Special Issue : Solid State Devices and Materials (2))
- Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
- Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
- High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
- Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte