Prakash Amit | Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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概要
- Prakash Amitの詳細を見る
- 同名の論文著者
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwanの論文著者
関連著者
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Prakash Amit
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Maikap Siddheswar
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Prakash Amit
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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CHEN W.
Electronics Research & Service Organization, Industrial Technology Research Institude
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Rahaman Sheikh
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Banerjee Writam
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Lai Chao
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Lee Heng
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
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Chen Frederick
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
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Kao Ming
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
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Tsai Ming
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
著作論文
- Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
- High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications