Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure

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概要

• 論文の詳細を見る

• A route to improve the uniformity of key resistive switching memory parameters such as SET/RESET voltages, low/high-resistance states as well as switching cycles is demonstrated in an IrOx/TaOx/WOx/W simple resistive memory stack by selecting the electroformation polarity. The various stack layers are confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analyses. Cumulative probability plots of the key memory parameters show tight distribution. The oxygen vacancy filaments are formed/ruptured owing to polarity-dependent oxygen ion migration, which is the switching mechanism in the TaOx/WOx bilayers, and improved resistive switching parameters under positive formation polarity are observed. The fabricated device has shown good potential for multilevel capability with a low voltage operation of \pm 3 V. The device has shown an excellent read endurance of {>}10^{5} cycles and data retention up to 10 years at 85 °C.

• 2012-04-25

著者

• CHEN W.

  Electronics Research & Service Organization, Industrial Technology Research Institude

• Prakash Amit

  Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

• Maikap Siddheswar

  Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

• Lai Chao

  Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

• Lee Heng

  Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

• Chen Frederick

  Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

• Kao Ming

  Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

• Tsai Ming

  Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan

• Prakash Amit

  Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

• Maikap Siddheswar

  Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan

関連論文

• High temperature magnetoresistance study of a magnetic tunnel junction
• Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point (Special Issue : Solid State Devices and Materials (2))
• Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
• Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
• High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
• Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte

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