Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Banerjee Writam
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Rahaman Sk.
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
関連論文
- Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point (Special Issue : Solid State Devices and Materials (2))
- Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
- Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
- High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
- Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte