Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
スポンサーリンク
概要
- 論文の詳細を見る
The bipolar and unipolar resistive switching characteristics of a memory device using a Cu filament in a new Cu/GeOx/W structure under low-voltage operation ({<}1.5 V) have been investigated. The germanium oxide (GeOx) solid electrolyte with a thickness of approximately 12 nm has been observed by both high-resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectroscopy analyses. A small device size of 150\times 150 nm2 has been observed by HRTEM. The composition of Ge:O has been investigated by X-ray photoelectron spectroscopy analysis. The memory device shows bipolar switching under current compliances of 1 nA--50 μA with a large SET voltage of approximately 0.5 V and unipolar switching with a larger current compliance of {>}100 μA. This memory device has excellent uniformity in SET/RESET voltages, low resistance state/high resistance state (LRS/HRS), long read endurance of {>}1\times 10^{5} cycles, and good data retention of {>}1\times 10^{4} s with high resistance ratios of {>}10^{5} in the bipolar mode and {>}10^{9} in the unipolar mode.
- 2012-04-25
著者
-
Rahaman Sheikh
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Lee Heng-Yuan
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
-
Chen Frederick
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
-
Kao Ming-Jer
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Chen Wei-Su
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Tsai Ming-Jinn
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Ray Samit
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
関連論文
- A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
- Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
- Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming
- Characteristics Improvement of Phase Change Memory with Programming Pulse Width
- Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point (Special Issue : Solid State Devices and Materials (2))
- A Comprehensive Parameterized Model of Phase-Change Memory Cell for HSPICE Circuit Simulation
- Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-$k$ Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
- Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
- Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure
- High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
- Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
- TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application
- Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide