Rahaman Sheikh | Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
スポンサーリンク
概要
- Rahaman Sheikh Ziaurの詳細を見る
- 同名の論文著者
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwanの論文著者
関連著者
-
Rahaman Sheikh
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Maikap Siddheswar
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Banerjee Writam
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Prakash Amit
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Maikap Siddheswar
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Lee Heng-Yuan
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
-
Chen Frederick
Electronic and Opto-Electronic Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan
-
Kao Ming-Jer
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Chen Wei-Su
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Prakash Amit
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Tsai Ming-Jinn
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
-
Ray Samit
Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
著作論文
- High-\kappa Al2O3/WOx Bilayer Dielectrics for Low-Power Resistive Switching Memory Applications
- Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte