Lee Heng-Yuan | Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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概要
- Lee Heng-Yuanの詳細を見る
- 同名の論文著者
- Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwanの論文著者
関連著者
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Lee Heng-Yuan
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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Tsai Ming-Jinn
Electronic and Opto-Electronic Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Tsai Ming-jinn
Electronics And Optoelectronics Research Laboratories (eol)
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LEE Lurng-Shehng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Lin Cha-hsin
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Wang Ching-Chiun
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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Tzeng Pei-Jer
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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Lin Cha-Hsin
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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Lee Lurng-Shehng
Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Hsinchu 310, Taiwan
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TZENG Pei-Jer
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
著作論文
- Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
- Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte
- TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application
- Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide