TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application

概要

論文の詳細を見る
TiO2 nanocrystals were successfully fabricated using an atomic-layer-deposition (ALD) system. A TiN/Al2O3-laminated structure was employed as a starting structure, and after appropriate annealing, TiN was oxidized and TiO2 nanocrystals were formed. Experimental results indicate that rapid thermal annealing (RTA) temperature and annealing time are very critical factors. Also, the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure is critical for TiO2 nanocrystal formation. Capacitance–voltage ($C$–$V$) measurement evidenced that an optimal annealing condition exists and an optimal annealing temperature and annealing time mainly depend on the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-04-30