HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications

概要

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A high-$\kappa$ HfO2/HfAlO/HfO2 nanolaminate charge trapping layer in a p-Si/SiO2/[HfO2/HfAlO/HfO2 nanolaminate]/Al2O3/platinum memory capacitor has been investigated. High-$\kappa$ HfO2, Al2O3, and HfO2/HfAlO/HfO2 nanolaminate charge trapping layers are deposited by atomic layer deposition. Well-behaved counter clockwise capacitance–voltage hysteresis characteristics are observed for all memory capacitors. A large memory window of ${\sim}10$ V, a very low leakage current density of ${\sim}5\times 10^{-9}$ A/cm2 at a gate voltage of $-5$ V, a high charge trapping density of ${\sim}1.6\times 10^{13}$/cm2, and a low charge loss of ${\sim}20$% after 10 years of retention for the HfO2/HfAlO/HfO2 nanolaminate charge trapping layer are observed as compared with those of pure HfO2 and pure Al2O3 charge trapping layers. Excellent memory characteristics of HfO2/HfAlO/HfO2 nanolaminate layers are obtained owing to the layer-by-layer charge storage. High-$\kappa$ HfO2/HfAlO/HfO2 nanolaminate charge trapping layers can be used in future nanoscaled high-performance nonvolatile memory device applications.
2007-04-15