Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates
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概要
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MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmission electron microscopy (TEM) shows perfectly matched GaN and ZnO lattices. In addition, atomic layer deposition (ALD) transition layers have been grown in order to provide a transition layer on ZnO substrates to block Zn diffusion and allow for future substrate removal for thin nitride fabrication.
著者
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Park Eun-hyun
School Of Electrical And Computer Engineering Georgia Institute Of Technology
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YANG Jer-Ren
Department of Material Science Engineering, National Taiwan University
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Wang Shen-jie
School Of Electrical And Computer Engineering Georgia Institute Of Technology
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Valencia Adriana
Ceriviet Inc
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Yang Jer-ren
Department Of Materials Science And Engineering National Taiwan University
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Yang Jer-ren
Department Of Material Science Engineering National Taiwan University
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FERGUSON Ian
School of Electrical and Computer Engineering, Georgia Institute of Technology
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NAUSE Jeff
Cermet Inc.
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Nause Jeff
Cermet Inc
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Ferguson Ian
School Of Electrical And Computer Engineering Georgia Institute Of Technology
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Feng Zhe
Graduate Institute Of Electro-optical Engineering And Department Of Electrical Engineering National
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LI Nola
School of Electrical and Computer Engineering, Georgia Institute of Technology
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TSAI Hung-Lin
Department of Materials Science and Engineering, National Taiwan University
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SUMMERS Christopher
School of Materials Science and Eng, Georgia Institute of Technology
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Li Nola
School Of Electrical And Computer Engineering Georgia Institute Of Technology
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Tsai Hung-lin
Department Of Materials Science And Engineering National Taiwan University
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Summers Christopher
School Of Materials Science And Eng Georgia Institute Of Technology
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