Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
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概要
- 論文の詳細を見る
- 2011-03-01
著者
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Yang Jer-ren
Department Of Material Science Engineering National Taiwan University
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Banerjee Writam
Department And Graduate Institute Of Electrical Engineering College Of Engineering Chang Gung Univer
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Yang Jer-ren
Department Of Materials Science And Engineering College Of Engineering National Taiwan University
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Maikap Siddheswar
Department And Graduate Institute Of Electrical Engineering College Of Engineering Chang Gung Univer
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LI Wei-Chih
Department of Materials Science and Engineering, College of Engineering, National Taiwan University
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Li Wei-chih
Department Of Materials Science And Engineering College Of Engineering National Taiwan University
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Li Wei-Chih
Department of Material Science Engineering, National Taiwan University, Taipei 106, Taiwan
関連論文
- Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates
- Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
- Physical and Memory Characteristics of Atomic-Layer-Deposited High-$\kappa$ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide