Physical and Memory Characteristics of Atomic-Layer-Deposited High-$\kappa$ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

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概要

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• The physical and memory characteristics of high-$\kappa$ hafnium–aluminum-oxide (HfAlO) nanocrystals in an n-Si/SiO2/HfO2/Al2O3/iridium-oxide (IrOx) structure have been investigated. The high-$\kappa$ HfAlO nanocrystal in the SiO2/HfO2/Al2O3 layers is formed owing to the diffusion of Al2O3 and HfO2 films after high-temperature annealing at 900 °C. High-$\kappa$ HfAlO nanocrystals with a small diameter of 5 nm and a high density of $1.7 \times 10^{12}$ cm-2 have been confirmed by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Owing to the formation of high-$\kappa$ HfAlO nanocrystals, a large hysteresis memory window of $\Delta V\approx 4.4$ V at a sweeping gate voltage of $\pm 10$ V is observed compared with that of as-deposited memory capacitor. A hysteresis memory window of $\Delta V\approx 1.4$ V with a small sweeping gate voltage of $\pm 7$ V is also observed. Good endurance of $10^{4}$ cycles with a large memory window of $\Delta V\approx 3.6$ V is obtained. A significant memory window of $\Delta V\approx 1.3$ V is observed after a retention time of $5\times 10^{4}$ s, owing to the charge confinement in the high-$\kappa$ HfAlO nanocrystals.

• 2009-05-25

著者

• Yang Jer-ren

  Department Of Material Science Engineering National Taiwan University

• Li Wei-chih

  Department Of Materials Science And Engineering College Of Engineering National Taiwan University

• Chang Liann-Be

  Nano Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

• Das Atanu

  Nano Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

• Maikap Siddheswar

  Nano Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

• Li Wei-Chih

  Department of Material Science Engineering, National Taiwan University, Taipei 106, Taiwan

• Yang Jer-Ren

  Department of Material Science Engineering, National Taiwan University, Taipei 106, Taiwan

関連論文

• Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates
• Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device
• Physical and Memory Characteristics of Atomic-Layer-Deposited High-$\kappa$ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate
• HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications

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