Low-power switching of nonvolatile resistive memory using hafnium oxide (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Wang Ching-chiun

  Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute

• Lee Heng-yuan

  Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute

関連論文

• TiO2 nanocrystal prepared by atomic-layer-deposition system for non-volatile memory application (Special issue: Solid state devices and materials)
• HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
• Low-power switching of nonvolatile resistive memory using hafnium oxide (Special issue: Solid state devices and materials)
• Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
• HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications

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