Analysis of Deprotection Reaction in Chemically Amplified Resists Using an Fourier Transform Infrared Spectrometer with an Exposure Tool

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概要

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• The reaction of dissociation of protection groups(hereafter the "deprotection reaction")was observed in situ during exposure of chemically amplified resists using an Fourier transform infrared(FT-IR)spectrometer equipped with an exposure unit, at a wavelength of 248 nm. The deprotection reaction in the chemically amplified resists during exposure was modeled on the basis of the in situ IR measurement results, and the deprotection reaction constant C_2, reaction initiation delay constant E_0, and average acid lifetime constant τ_2 were calculated. Herein, we report our results. The chemically amplified resists used in the experiments were based on polystyrene(PS)and had a t-butoxycarbonyl(t-BOC)protection group(hereafter "t-BOC resist")and a 1-ethoxyethyl(ethyl acetal)resist(hereafter "EA resist"). The deprotection reaction in the t-BOC resist was observed through changes in the infrared spectrum at 1150 cm^<-1>(C-O ester bonds);the deprotection reaction in the EA resist was monitored through changes in the infrared spectrum at 2980 cm^<-1>(H-C-H alkane bonds). It was found that at room temperature(23℃), whereas the deprotection reaction in the t-BOC resist during exposure occurred to the extent of only was only 5% complete, it occurred nearly to completion in the EA resist. The change in absorption with exposure time was converted into a protection ratio for protection groups, and fitted to a newly devised deprotection reaction model to estimate the deprotection reaction parameters for exposure. The deprotection reaction parameters thus obtained were input in to a profile simulator, and profile simulations were attempted. The results indicated that whereas the t-BOC resist could be patterned at an ambient a temperature of 70℃ and above during exposure, the EA resist could be patterned at room temperature. In resist development and studies of resist processes, this system is expected to prove useful for the analysis of deprotection reactions during exposure.

• 社団法人応用物理学会の論文
• 2000-03-15

著者

• MIYAKE Yasuhiko

  Hitachi Cable Ltd.

• Miyake Yasunari

  Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology

• Miyake Yasuhiro

  Litho Tech Japan Corp.

• Sekiguchi Atsushi

  Litho Tech Japan Corp.

• ISONO Mariko

  Litho Tech Japan Corp.

• Isono M

  Litho Tech Japan Corp. Saitama Jpn

• Sekiguchi Atsushi

  Litho Tech Japan Corp

• Sekiguchi A

  Anelva Corp. Tokyo Jpn

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