Deposition Rate and Gap Filling Characteristics in Cu Chemical Vapor Deposition with Trimethylvinylsilyl Hexafluoro-acetylacetonate Copper (I)

概要

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To obtain a low-resistivity material and good gap-filling characteristics in the interconnect metallization process for advanced ULSI devices, we investigated the deposition rate and gap-filling characteristics of Cu chemical vapor deposition. We used trimethylvinylsilyl hexafluoro-acetylacetonate copper (I) as the source at deposition temperatures from 150 to 240℃ and source partial pressures (P_s) from 16 to 270 Pa. The deposition rate was studied as functions of the deposition temperature and P_s. The deposition rate increased as the temperature increased, but gap filling simultaneously deteriorated under constant P_s. To obtain good gap filling, P_s should be increased, but P_s is restricted by the saturated vapor pressure. Interpretations are given for gap-filling characteristics from the viewpoint of the deposition mechanism. It is concluded that the maximum deposition rate with excellent gap filling is regulated by the source vapor pressure. We succeeded in satisfactorily filling a hole of an aspect ratio of 5.5 at 200 Pa of P_s, and at 170℃ with the deposition rate of 40 nm/min. To obtain the same hole filling characteristic at a deposition temperature of 180℃, P_s should be raised to 250 Pa and the dcposition rate should be 60 nm/min.
社団法人応用物理学会の論文
1998-12-15