Chemical Vapor Deposition of Copper Thin Film Using a Novel Precursor of Allyloxytrimethylsilyl Hexafluoroacetylacetonate Copper(I) : Semiconductors

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概要

• 論文の詳細を見る

• A new volatile liquid copper precursor of allyloxytrimethylsilyl hexafluoroacetylacetonate copper (I) [Cu(hfac)(aotms)] , termed Cypron was studied for the chemical vapor deposition of copper (Cu-CVD) thin films. This precursor has higher vapor pressure and more suitable thermal stability than the previously known trimethylvinylsilyl hexafluoroacetylacetonate copper (I) [Cu(hfac)(tmvs)]. In the presence of water vapor, smooth copper films were obtained with a high deposition rate of about 90nm/min at a low temperature of 190℃. The resistivity of the films was as low as 1.9μ・cm. The step coverage and filling property of this novel precursor were excellent.

• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Ogi Katsumi

  Materials Research Laboratories Central Research Institute Mitsubishi Materials Corporation

• Itsuki Atsushi

  Materials Research Laboratories Central Research Institute Mitsubishi Materials Corporation

• SEKIGUCHI Atsushi

  Process Development Laboratiory, Anelva Corporation

• OKADA Osamu

  Process Development Laboratiory, Anelva Corporation

• ZHANG Minjuan

  Process Development Laboratory, Anelva Corporation

• Zhang Minjuan

  Process Development Laboratory Anelva Corporation

• Okada Osamu

  Process Development Laboratory Anelva Corporation

• Sekiguchi Atsushi

  Process Development Laboratory Anelva Corporation

関連論文

• Reaction of Copper Oxide and β-Diketone for In situ Cleaning of Metal Copper in a Copper Chemical Vapor Deposition Reactor
• Deposition Rate and Gap Filling Characteristics in Cu Chemical Vapor Deposition with Trimethylvinylsilyl Hexafluoro-acetylacetonate Copper (I)
• Chemical Vapor Deposition of Copper Thin Film Using a Novel Precursor of Allyloxytrimethylsilyl Hexafluoroacetylacetonate Copper(I) : Semiconductors

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