Approach for High-resolution of Chemically Amplified Resists Using Rate Editor Software

概要

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In discussions of resist resolution and process margins, knowledge of the resist development characteristics is more important than of primary importance. However, at present, there is insufficient understanding of the extent of the impact of various development characteristics on different process margins. The authors therefore analyzed photoresist development rate data obtained for various exposure doses, and developed rate analysis software that allows the development, and hence characteristics, of the resists to be modified freely. The design rule of VLSI devices is expected to reach the 70 to 100 nm scale by 2005 through lithography using F2 excimer lasers (157 nm). The software developed in this study was used to determine which development characteristics need be changed and to what extent, to obtain high resolution and a broad defocus margin for processes involving chemically amplified positive resist for use with ArF excimer lasers. The resist was improved based on the findings of this study, and the validity of the results was confirmed.
2003-01-15