Development of Photochemical Analysis System for F_2-Excimer Laser Lithography Processes

概要

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A system for photochemical analysis of F_2-excimer lithography processes has been developed.The system, VUVES-4500, consists of 3 units:(1)an exposure and bake unit that uses the F_2-excimer laser to carry out a flood exposure and then post-exposure bake(PEB), (2)a unit for measurement of the development rate of photoresists, and(3) a simulation unit that utilizes PROLITH of profile simulation software to calculate the resist profiles and process latitude using the measured development rate data.With this system, preliminary evaluation of the performance of F_2-Excimer laser lithography can be performed without the use of a lithography tool capable of imaging and alignment.Profiles for 150nm lines are simulated for the PAR-101 resist(manufactured by Sumitomo Chemical)and the SAL-601 resist(manufactured by Shipley), a chemically amplified resist that has sensitivity at the F_2-excimer laser wavelength.The simulation successfully predicts the resist behavior.Thus it is confirmed that the system enables efficient evaluation of the performance of F_2-excimer laser lithography processes.
社団法人応用物理学会の論文
2000-04-15