HISAMATSU Tadashi | National Space Development Agency of Japan
スポンサーリンク
概要
関連著者
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HISAMATSU Tadashi
National Space Development Agency of Japan
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堀 史説
阪府大先端研
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OSHIMA Ryuichiro
Research Institute for Advanced Science & Technology, Osaka Prefecture University
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大嶋 隆一郎
大阪ニュークリアサイエンス協会
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大嶋 隆一郎
大阪大学基礎工学部
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Oshima R
Osaka Prefecture Univ. Sakai Jpn
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MATSUDA Sumio
National Space Development Agency of Japan (NASDA)
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Hori Fuminobu
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Matsuda Sumio
National Space Development Agency Of Japan
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TAMANO Takuya
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Tamano Takamichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Hisamatsu T
National Space Development Agency Of Japan
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Tamano Takuya
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Oshima Ryuichiro
Research Institute For Advanced Science And Technology Osaka Prefecture University
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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YAMAGUCHI Masafumi
Toyota Technological Institute
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KHAN Aurangzeb
Toyota Technological Institute
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Taylor Stephen
Toyota Technological Institute
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Yamaguchi Masakazu
Research And Development Center Toshiba Corporation
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Yamaguchi Masafumi
Department Of Physiological Chemistry Hiroshima University School Of Medicine
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Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
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Khan A
Toyota Technological Inst. Nagoya Jpn
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Khan A
Department Of Electrical And Electronic Engineering Tottori University
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UCHIDA Yoshitsugu
Osaka Branch, Tokyo Technica Co.
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Uchida Yoshitsugu
Osaka Branch Tokyo Technica Co.
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
著作論文
- Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons
- Study on Behavior of Electron Irradiation Defects and Impurities of Czochralski Silicon with Annealing by Positron Annihilation
- Study on Defects of Solar Cell Silicon Irradiated with 1 MeV Electrons by Positron Annihilation
- Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements