Epitaxial Growth of Highly Crystalline and Conductive Nitride Films by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-11-15
著者
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Lee M
National Inst. Advanced Interdisciplinary Res.(nair) Tsukuba Jpn
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Koinuma Hideomi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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YOSHIMOTO Mamoru
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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KAWASAKI Masashi
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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KUMAGAI Masao
Material Characterization Laboratory, Kanagawa High-Technology Foundation, Kanagawa Science Park
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LEE Myung
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koinuma Hideomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kawasaki Masashi
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Yoshimoto Mamoru
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Yoshimoto Masahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Koinuma Hideomi
National Institute for Materials Science (NIMS)
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