SHIMODA Tatsuya | Base Technology Research Center, Seiko Epson Corp.

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概要

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著作論文

Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors : Semiconductors
Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors : Semiconductors
Relationship between Lattice Deformation and Polarization in BaTiO_3
Electronic States of Perovskite-Type Oxides and Ferroelectricity
Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
Current Paths over Grain Boundaries in Polycrystalline Silicon Films : Semiconductors
Selective Deposition of Electroless Plating Films Using the Difference between the Functional Groups of Self-Assembled Monolayers
Device Simulation of grain Boundaries with Oxide-Silicon Interface Roughness in Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors
24.4:Investigation of Hot Carrier Degradation Due to AC Stress in Low Temperature Poly-Si TFTs(発表概要)(Report on 2000 SID International Symposium)

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